The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Aug. 17, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Hsun Hsu, New Taipei, TW;
Ping-Hao Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, an image sensor is provided. The image sensor comprises a first photodetector disposed within a front-side surface of a semiconductor substrate. A trench isolation structure is disposed over a back-side surface of the semiconductor substrate. The trench isolation structure includes a buffer layer and a dielectric liner. The buffer layer covers the back-side surface of the semiconductor substrate and fills trenches that extend downward into the back-side surface of the semiconductor substrate. The dielectric liner is disposed between the buffer layer and the semiconductor substrate. A composite grid structure has composite grid segments that are aligned over the trenches, respectively. The buffer layer separates the dielectric liner from the composite grid structure. A light shield structure is disposed within the buffer layer and directly overlies the first photodetector.