The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Mar. 11, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun Hao Liao, Hsinchu, TW;

Yu Chuan Liang, Hsinchu, TW;

Chu Fu Chen, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/266 (2006.01); H01L 21/8234 (2006.01); H01L 23/00 (2006.01); H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 21/266 (2013.01); H01L 22/32 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/06515 (2013.01);
Abstract

A method includes: providing a substrate defining a scribe line region and a device region adjacent to the scribe line region; depositing a first mask layer over the device region and the scribe line region; patterning the first mask layer to define a plurality of first areas in the device region and a plurality of second areas in the scribe line region, wherein the first areas and the second areas are parallel and extending in a first direction from a top-view perspective; performing a first ion implantation to form first well regions in the first areas and second well regions in the second areas; coupling conductive pads to the second well regions; and performing a test on the second well regions through the conductive pads.


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