The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Aug. 26, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Hao Hou, Hsinchu, TW;
Che-Hao Chang, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Chi On Chui, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/28185 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 21/823821 (2013.01);
Abstract
A method includes depositing a first high-k dielectric layer over a first semiconductor region, performing a first annealing process on the first high-k dielectric layer, depositing a second high-k dielectric layer over the first high-k dielectric layer; and performing a second annealing process on the first high-k dielectric layer and the second high-k dielectric layer.
Quick Actions:
Hou, Cheng-Hao. (2024). High-k gate dielectric and method forming same (U.S. Patent No. 12020991). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12020991
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile