The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jul. 01, 2021
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Kai Jen, Taichung, TW;

Hsiang-Po Liu, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H10B 12/01 (2023.02);
Abstract

A semiconductor structure and its manufacturing method are provided. The method includes sequentially forming an insulating layer and a patterned mask layer on a substrate. The patterned cover curtain layer has an opening, and the opening includes a main body portion and two extension portions located at both ends of the main body portion. The method includes sequentially forming a first sacrificial layer, a second sacrificial layer, and a third sacrificial layer on the insulating layer. The first sacrificial layer fills the extension portions and defines a recess in the main body portion. The second sacrificial layer is formed in the recess defined by the first sacrificial layer. The third sacrificial layer is formed on the first sacrificial layer located in the extension portions.


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