The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Sep. 20, 2019
Lam Research Corporation, Fremont, CA (US);
Joseph R. Abel, West Linn, OR (US);
Douglas Walter Agnew, La Jolla, CA (US);
Adrien Lavoie, Newberg, OR (US);
Ian John Curtin, Minneapolis, MN (US);
Purushottam Kumar, Hillsboro, OR (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Various embodiments include methods to produce low dielectric-constant (low-k) films. In one embodiment, alternating ALD cycles and dopant materials are used to generate a new family of silicon low-k materials. Specifically, these materials were developed to fill high-aspect-ratio structures with re-entrant features. However, such films are also useful in blanket applications where conformal nanolaminates are applicable. Various embodiments also disclose SiOF as well as SiOCF, SiONF, GeOCF, and GeOF. Analogous films may include halide derivatives with iodine and bromine (e.g., replace 'F' with “I” or “Br”). Other methods, chemistries, and techniques are disclosed.