The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jun. 23, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Weiwei He, Hubei, CN;

Liang Qiao, Hubei, CN;

Mingxian Lei, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G11C 7/08 (2006.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); H03K 19/017 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 7/08 (2013.01); G11C 16/0433 (2013.01); G11C 16/26 (2013.01); H03K 19/01742 (2013.01);
Abstract

The present disclosure provides a method for discharging a memory device after an erase operation. The method comprises grounding a source line of the memory device; and switching on a discharge transistor to connect a bit line of the memory device to the source line by maintaining a constant voltage difference between a gate terminal of the discharge transistor and the source line. The method also includes comparing an electrical potential of the source line with a first predetermined value; and floating the gate terminal of the discharge transistor when the electrical potential of the source line is lower than the first predetermined value.


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