The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Jun. 29, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Kazunaga Ono, Yamanashi, JP;

Kanto Nakamura, Yamanashi, JP;

Toru Kitada, Yamanashi, JP;

Atsushi Gomi, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/06 (2006.01); G01N 21/95 (2006.01); G01N 21/21 (2006.01);
U.S. Cl.
CPC ...
G01B 11/0675 (2013.01); G01N 21/9501 (2013.01); G01N 2021/213 (2013.01);
Abstract

There is provided a film thickness measurement method which measures a film thickness of a specific film to be measured in a multilayer film in situ in a film formation system that forms the multilayer film on a substrate, the method comprising: regarding a plurality of films located under the film to be measured as one underlayer film, measuring a film thickness of the underlayer film, and deriving an optical constant of the underlayer film by spectroscopic interferometry; and after the film to be measured is formed, deriving a film thickness of the film to be measured by spectroscopic interferometry using the film thickness and the optical constant of the underlayer film.


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