The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Jan. 24, 2022
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Saurabh Roy, Villach, AT;
Matteo Dainese, Munich, DE;
Michael Ehmann, Villach, AT;
Hiroshi Narahashi, Villach, AT;
Johanna Schlaminger, Villach, AT;
Katharina Teichmann, Munich, DE;
Sigrid Wabnig, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/44 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
C23F 1/44 (2013.01); H01L 21/32134 (2013.01);
Abstract
A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.