The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Apr. 20, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Da-Jun Lin, Kaohsiung, TW;
Min-Hua Tsai, Tainan, TW;
Tai-Cheng Hou, Tainan, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An MRAM structure includes a dielectric layer. A first MRAM, a second MRAM and a third MRAM are disposed on the dielectric layer, wherein the second MRAM is disposed between the first MRAM and the third MRAM, and the second MRAM includes an MTJ. Two gaps are respectively disposed between the first MRAM and the second MRAM and between the second MRAM and the third MRAM. Two tensile stress pieces are respectively disposed in each of the two gaps. A first compressive stress layer surrounds and contacts the sidewall of the MTJ entirely. A second compressive stress layer covers the openings of each of the gaps and contacts the two tensile material pieces.