The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Sep. 10, 2021
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H10B 99/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 21/02178 (2013.01); H01L 21/02488 (2013.01); H01L 21/02568 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/78645 (2013.01); H01L 29/78696 (2013.01); H10B 99/00 (2023.02); H01L 21/0262 (2013.01);
Abstract
A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.
Quick Actions:
Kula, Witold. (2024). Transistors comprising two-dimensional materials and related memory cells and electronic devices (U.S. Patent No. 12015089). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12015089
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile