Semiconductor device and manufacturing method thereof

Abstract

A semiconductor die includes semiconductor substrate and interconnection structure. Interconnection structure includes first conductive lines, first conductive patterns, first pillar stacks, second pillar stacks, gate patterns. First conductive lines extend parallel to each other in first direction and are embedded in interlayer dielectric layer. First conductive patterns are disposed in row along first direction and are embedded in interlayer dielectric layer beside first conductive lines. First pillar stacks include first pairs of metallic blocks separated by first dielectric material blocks. Second pillar stacks include second pairs of metallic blocks separated by second dielectric material blocks. Each second pillar stack is electrically connected to respective first conductive pattern. Gate patterns extend substantially perpendicular to first conductive lines. Each gate pattern directly contacts one respective second pillar stack and extends over a group of first pillar stacks.