The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Aug. 20, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Yoshitaka Nakamura, Boise, ID (US);

Yi Fang Lee, Boise, ID (US);

Jerome A. Imonigie, Boise, ID (US);

Scott E. Sills, Boise, ID (US);

Aaron Michael Lowe, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/24 (2013.01); H01L 29/41741 (2013.01); H01L 29/45 (2013.01); H10B 12/05 (2023.02); H10B 12/31 (2023.02);
Abstract

Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies.


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