The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2024

Filed:

Sep. 29, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

John Knickerbocker, Monroe, NY (US);

Mukta Ghate Farooq, Hopewell Junction, NY (US);

Katsuyuki Sakuma, Fishkill, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/367 (2006.01); H01L 23/538 (2006.01); H01L 23/66 (2006.01); H01P 3/00 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 21/4857 (2013.01); H01L 21/4871 (2013.01); H01L 21/6835 (2013.01); H01L 23/3675 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 24/19 (2013.01); H01P 3/003 (2013.01); H01P 11/003 (2013.01); H01L 2221/68368 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6627 (2013.01); H01L 2224/2105 (2013.01); H01L 2924/17151 (2013.01); H01L 2924/19033 (2013.01);
Abstract

An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.


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