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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12014987 B1

PDFFull Text
Date of Patent:
Jun. 18, 2024

Filed:

Jul. 20, 2022

Electro-migration reduction

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Chen Ho, Hsinchu, TW;

Chien Lin, Hsinchu, TW;

Cheng-Yeh Yu, Hsinchu, TW;

Hsin-Hsing Chen, Hsinchu, TW;

Ju Ru Hsieh, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76871 (2013.01); H01L 23/5226 (2013.01);
Abstract

The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.

Find Patent Forward Citations

Ho, Yi-Chen. (2024). Electro-migration reduction (U.S. Patent No. 12014987). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12014987

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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