The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Dec. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/0273 (2013.01); H01L 21/32139 (2013.01); H01L 28/20 (2013.01); H01L 28/60 (2013.01);
Abstract
A method of fabricating a semiconductor device is provided. The method includes forming a first metal layer over a semiconductor substrate, and forming a first layer over the first metal layer. The first layer and first metal layer are etched to expose a sidewall of the first layer and a sidewall of the first metal layer, wherein the etching disburses a portion of the first metal layer to create an accumulation of material on at least one of the sidewall of the first layer or the sidewall of the first metal layer. At least some of the accumulation is etched away using an etchant comprising fluorine.