The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2024
Filed:
Oct. 12, 2020
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Kazuma Matsui, Tokyo, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/31111 (2013.01);
Abstract
There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object () containing silicon nitride in an etching gas containing halogen fluoride, which is a compound of bromine or iodine and fluorine, to etch the silicon nitride of the etching object () without using plasma under a pressure of 1 Pa to 80 kPa.