The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Nov. 09, 2021
Qualcomm Incorporated, San Diego, CA (US);
Thomas Hua-Min Williams, Irvine, CA (US);
Matthew Chauncey Kusbit, Santee, CA (US);
Luis Chen, Chula Vista, CA (US);
Keyurkumar Karsanbhai Kansagra, Bangalore, IN;
Smeeta Heggond, Bagalkot, IN;
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
An IC includes a first set of MOS transistors configured to have a common first transistor source/drain terminal A, a first transistor gate, and a first transistor source/drain terminal B. In addition, the IC includes a first plurality of interconnect stacks coupled to the first transistor source/drain terminal A. Each interconnect stack of the first plurality of interconnect stacks extends in a second direction over at least a portion of the first set of MOS transistors and includes consecutive metal layer interconnects. Further, the IC includes a first comb interconnect structure extending in a first direction orthogonal to the second direction, with comb fingers extending in the second direction over at least a portion of the first set of MOS transistors and the first plurality of interconnect stacks. The first comb interconnect structure is coupled to the first plurality of interconnect stacks.