The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 11, 2024

Filed:

Apr. 14, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dongjoon Oh, Suwon-si, KR;

Junyun Kweon, Cheonan-si, KR;

Jumyong Park, Cheonan-si, KR;

Jin Ho An, Seoul, KR;

Chungsun Lee, Asan-si, KR;

Hyunsu Hwang, Siheung-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49822 (2013.01); H01L 23/3128 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 25/105 (2013.01); H01L 2224/16227 (2013.01);
Abstract

Disclosed are interconnection structures and semiconductor packages. The interconnection structure includes a first dielectric layer and a first hardmask pattern that are sequentially stacked, and a first interconnection pattern that penetrates the first hardmask pattern and the first dielectric layer. The first hardmask pattern includes a dielectric material having an etch selectivity with respect to the first dielectric layer. The first interconnection pattern includes a via part, a first pad part, and a line part that are integrally connected to each other. The first pad part vertically overlaps the via part. The line part extends from the first pad part. A level of a bottom surface of the first pad part is lower than a level of a bottom surface of the line part.


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