The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Mar. 26, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
Changxin Memory Technologies, Inc., Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/308 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3086 (2013.01); H10B 12/01 (2023.02);
Abstract
A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate includes a plurality of first trenches and a first pattern having an array of lines each formed between adjacent two of the plurality of first trenches; forming a first dielectric layer to cover at least the sidewalls of each of the lines in the array of the first pattern; and each of the lines in the array of the first pattern is segmented to form elements of a second pattern.