The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2024
Filed:
Apr. 03, 2020
Asml Netherlands B.v., Veldhoven, NL;
Trumpf Lasersystems for Semiconductor Manufacturing Gmbh, Ditzingen, DE;
Ruud Antonius Catharina Maria Beerens, Roggel, NL;
Nico Johannes Antonius Hubertus Boonen, Geldrop, NL;
Stefan Michael Bruno Bäumer, Eindhoven, NL;
Tolga Mehmet Ergin, Bietigheim-Bissingen, DE;
Andreas Kristian Hopf, Stuttgart, DE;
Derk Jan Wilfred Klunder, Geldrop, NL;
Martin Anton Lambert, Korb, DE;
Stefan Piehler, Stuttgart, DE;
Manisha Ranjan, Eindhoven, NL;
Frank Bernhard Sperling, Nuenen, NL;
Andrey Sergeevich Tychkov, Eindhoven, NL;
Jasper Witte, Eindhoven, NL;
Jiayue Yuan, Eindhoven, NL;
ASML Netherlands B. V., Veldhoven, NL;
Trumpf Lasersystems For Semiconductor Manufacturing GmbH, Ditzingen, DE;
Abstract
A laser focusing system () for use in an EUV radiation source is described, the laser focusing system comprising: •—a first curved mirror () configured to receive a laser beam from a beam delivery system () and generate a first reflected laser beam (); •—a second curved mirror () configured to receive the first reflected laser beam () and generate a second reflected laser beam (), wherein the laser focusing system () is configured to focus the second reflected laser beam () to a target location () in a vessel () of the EUV radiation source ().