The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Mar. 19, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Tsung-Chieh Hsiao, Changhua County, TW;
Po-Sheng Lu, Hsinchu, TW;
Wei-Chih Wen, Hsinchu, TW;
Liang-Wei Wang, Hsinchu, TW;
Yu-Jen Wang, Hsinchu, TW;
Dian-Hau Chen, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/85 (2023.02);
Abstract
A semiconductor device includes a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.