The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Jan. 20, 2022
Changxin Memory Technologies, Inc., Hefei, CN;
Yang Chen, Hefei, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Abstract
The present disclosure provides a method of manufacturing a capacitor connecting line of a memory and a memory. The method of manufacturing includes: forming a bit line layer and a first dielectric layer on a substrate sequentially; patterning the bit line layer and the first dielectric layer, and forming bit line structures arranged at intervals along a first direction and dielectric structures on tops of the bit line structures; forming an insulating layer on the substrate with the bit line structures and the dielectric structures formed thereon, to completely cover the bit line structures and the dielectric structures; forming second isolation structures arranged at intervals between adjacent bit line structures; and forming conductive structures between first isolation structures and the second isolation structures, and forming storage node contact structures.