The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Mar. 03, 2021
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Andrew Clarke, Santa Barbara, CA (US);

Chad Fulk, Santa Barbara, CA (US);

Aaron M. Ramirez, Goleta, CA (US);

Assignee:

Raytheon Company, Tewksbury, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0296 (2006.01); H01L 31/09 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 25/167 (2013.01); H01L 31/02002 (2013.01); H01L 31/0216 (2013.01); H01L 24/03 (2013.01); H01L 24/27 (2013.01); H01L 24/83 (2013.01); H01L 31/0224 (2013.01); H01L 31/02966 (2013.01); H01L 31/09 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/051 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05609 (2013.01); H01L 2224/0801 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/2783 (2013.01); H01L 2224/29026 (2013.01); H01L 2224/29034 (2013.01); H01L 2224/29188 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/80815 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/3512 (2013.01);
Abstract

An electrical device includes a substrate, an insulating layer supported by the substrate, and an electrically conductive vertical interconnect disposed in a via hole of the insulating layer. The insulating layer may be configured to provide a coefficient of thermal expansion (CTE) that is equal to or greater than a CTE of the vertical interconnect to thereby impart axial compressive forces at opposite ends of the interconnect. The vertical interconnect may be a hybrid interconnect structure including a low CTE conductor post having a pocket that contains a high CTE conductor contact. At low operating temperatures, the high CTE conductor contact is under tension due to the higher CTE, and thus the high CTE conductor contact relieves strain in the device by void expansion and elongation.


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