The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Aug. 18, 2020
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Yuan-Sheng Huang, Taichung, TW;
Ryan Chia-Jen Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure and method for manufacturing the same are provided. The semiconductor structure includes a substrate having fin structures. The substrate includes a material having a substrate thermal expansion coefficient. The semiconductor structure also includes an isolation structure between the fin structures. The isolation structure includes a first dielectric material and a second dielectric material. The first dielectric material has a first thermal expansion coefficient and the second dielectric material has a second thermal expansion coefficient. The substrate thermal expansion coefficient is in between the first thermal expansion coefficient and the second thermal expansion coefficient.