The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Nov. 18, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Xifei Bao, Hefei, CN;

Runsheng Shen, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/67 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01L 21/67253 (2013.01); H10B 12/03 (2023.02);
Abstract

The present application relates to a semiconductor equipment regulation method, including: providing a simulated wafer; placing the simulated wafer in an etching chamber, and conditioning a temperature in the chamber by using a temperature control device while the simulated wafer is etched by using an etching gas; during the etching process, forming a polymer layer on a surface of each etch hole; acquiring a thickness distribution map of the polymer layer in the entire simulated wafer; comparing the acquired thickness distribution map with a target thickness distribution map; and adjusting a temperature control effect through using the temperature control device on each region of the simulated wafer according to a result of the comparison, so as to adjust thickness uniformity of the polymer layer in the entire wafer.


Find Patent Forward Citations

Bao, Xifei. (2024). Semiconductor equipment regulation method and semiconductor device fabrication method (U.S. Patent No. 12002689). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12002689

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