The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Oct. 20, 2022
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Takashi Yamauchi, Kumamoto, JP;

Shinichiro Kawakami, Kumamoto, JP;

Masashi Enomoto, Kumamoto, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/31144 (2013.01); H01L 21/6715 (2013.01);
Abstract

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection filmis previously formed below a resist film. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the anti-reflection filmfacing a bottom of the recess patternof the resist film. Therefore, the metal componentcan be suppressed from remaining at the bottom of the recess pattern. Therefore, when the SiOfilmis subsequently etched using the pattern of the resist film, the etching is not hindered, so that defects such as bridges can be suppressed.


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