The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Mar. 28, 2022
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yun-Chen Chou, Hsinchu, TW;

Tien-Yen Wang, Hsinchu, TW;

Chun-Hsiung Hung, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/08 (2006.01); G11C 7/06 (2006.01); G11C 17/14 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); G11C 7/065 (2013.01); G11C 17/14 (2013.01);
Abstract

A sensing module, a memory device, and a sensing method are provided to perform a read operation so that the un-programmed/programmed state of a memory cell is identified. The sensing module includes a sensing amplifier and a current sink, and both are electrically connected to the memory cell. The sensing amplifier generates a sensing current and identifies the un-programmed/programmed state of the memory cell accordingly. The current sink receives a reference current being equivalent to the summation of the sensing current and a cell current flowing through the memory cell. The reference current is constant, and the sensing current is changed with the cell current. The cell current is generated based on a high read voltage and a low read voltage applied to the memory cell. The sensing current is higher if the memory cell is un-programmed, and the sensing current is lower if the memory cell is programmed.


Find Patent Forward Citations

Loading…