The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Aug. 24, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Kyungjin Kim, San Jose, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0611 (2013.01); G06F 3/0655 (2013.01); G06F 3/0679 (2013.01);
Abstract

An example method of performing read operation with respect to a memory device comprises: receiving a request to perform a read operation with respect to a memory page of a memory device; identifying a block family associated with a block comprising the memory page; determining a block family-based read voltage level associated with the block family; performing, using the block family-based read voltage level, a read operation with respect to the memory page; determining, by performing an error correction operation with respect to the memory page, a new read voltage level associated with the block family; and associating, by a last successful read voltage level memory data structure, the new read voltage level as a last the successful read voltage level with the block family.


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