The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Nov. 22, 2023
Applicant:

Agc Inc., Tokyo, JP;

Inventors:

Yuya Nagata, Tokyo, JP;

Daijiro Akagi, Tokyo, JP;

Kenichi Sasaki, Tokyo, JP;

Hiroaki Iwaoka, Tokyo, JP;

Assignee:

AGC Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/26 (2012.01); G03F 1/52 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/26 (2013.01); G03F 1/52 (2013.01); G03F 1/80 (2013.01);
Abstract

A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The phase shift film contains it as a main component. A ratio of a maximum value of an intensity of a peak of diffracted light from the phase shift film in a 2θrange of 35° to 45° to an average value of an intensity of the diffracted light in a 28 range of 55° to 60° measured using an XRD method with a CuKα ray, upon being irradiated with the EUV light with an incident angle of θ, is 1.0 or more and 30 or less. A refractive index and an extinction coefficient of the phase shift film to the EUV light are 0.925 or less, and 0.030 or more, respectively.


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