The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
May. 25, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yong Yang, Tengzhou, CN;
Jacqueline S. Wrench, San Jose, CA (US);
Yixiong Yang, Fremont, CA (US);
Pradeep K. Subrahmanyan, Cupertino, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 5/06 (2006.01); H01L 21/8234 (2006.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 5/06 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H10B 43/27 (2023.02);
Abstract
A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.