The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Aug. 27, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Bo-Wen Hsieh, Miaoli County, TW;
Pei Ying Lai, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/785 (2013.01);
Abstract
A gate dielectric structure is formed over a channel structure. One or more work function (WF) metal layers of a metal gate are formed over the gate dielectric structure. The one or more WF metal layers are treated with a fluorine-containing material. One or more processes are performed to cause fluorine from the fluorine-containing material to diffuse at least partially into the gate dielectric structure.