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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11996451 B1

PDFFull Text
Date of Patent:
May. 28, 2024

Filed:

Aug. 10, 2022

Semiconductor device with ferroelectric aluminum nitride

Applicants:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Inventors:

Miin-Jang Chen, Hsinchu, TW;

Tzong-Lin Jay Shieh, Hsinchu, TW;

Bo-Ting Lin, Hsinchu, TW;

Assignees:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

Attorney:

Seed IP Law Group LLP

Primary Examiner:

Tu-Tu V Ho

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02458 (2013.01); H01L 29/40111 (2019.08); H01L 29/42356 (2013.01); H01L 29/516 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01);
Abstract

Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.

Find Patent Forward Citations

Chen, Miin-Jang. (2024). Semiconductor device with ferroelectric aluminum nitride (U.S. Patent No. 11996451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11996451

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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