The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Jul. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chia-Chung Chen, Keelung, TW;
Chi-Feng Huang, Hsinchu County, TW;
Victor Chiang Liang, Hsinchu, TW;
Chung-Hao Chu, Hsinchu, TW;
Ching-Yu Yang, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/324 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/324 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/7833 (2013.01); H01L 29/7848 (2013.01); H01L 29/665 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.