The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
Aug. 27, 2020
Albert-ludwigs-universität Freiburg, Freiburg, DE;
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;
Stefano Leone, Freiburg, DE;
Christian Manz, Freiburg, DE;
Hanspeter Menner, Freiburg, DE;
Joachim Wiegert, Freiburg, DE;
Jana Ligl, Freiburg, DE;
Albert-Ludwigs-Universität Freiburg, Freiburg, DE;
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Munich, DE;
Abstract
A semiconductor layer and a method and an apparatus for its manufacturing are disclosed. The semiconductor layer includes at least one compound of the formula MMN, where Mis selected from group 13 of the periodic table and Mis selected from the group comprising scandium, yttrium, erbium, and europium and where the parameter a is selected between 0.01 and 0.99. The method includes supplying a first precursor into a reaction chamber, the first precursor including at least Mand being supplied to the reaction chamber at a molar flow rate of at least 1·10mol/min by providing the first precursor by means of a first bubbler from which it is evaporated and supplied to the reaction chamber, the temperature of the first bubbler being more than 90° C.