The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Feb. 13, 2023
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Otto Chen, Hsinchu, TW;

Chi-Ying Wu, Hsinchu, TW;

Chia-Chih Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32935 (2013.01); H01J 37/244 (2013.01); H01J 37/32146 (2013.01); H01J 37/32155 (2013.01); H01J 37/32449 (2013.01); H01J 37/3266 (2013.01); H01J 2237/24405 (2013.01); H01J 2237/24465 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/24564 (2013.01);
Abstract

An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.


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