Quantum dot devices with independent gate control

Abstract

Quantum dot devices with independent gate control are disclosed. An example quantum dot device includes N parallel rows of gate lines provided over a quantum well stack. Each of the N parallel rows of gate lines defines a respective row of a quantum dot formation region in the quantum well stack and includes M parallel gate lines stacked above one another. The quantum dot device may further include, for each of the N×M gate lines, a gate that extends toward the quantum well stack, where, for an individual row of the N parallel rows, gates that extend toward the quantum well stack from the M parallel stacked gate lines are arranged above a respective row of a quantum dot formation region in the quantum well stack. In this manner, each of the N×M gates responsible for formation of different quantum dots may be controlled independently.