The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Oct. 14, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Kyong Jin Hwang, Singapore, SG;
Robert J. Gauthier, Jr., Williston, VT (US);
Jie Zeng, Woodlands, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0262 (2013.01); H01L 29/0821 (2013.01); H01L 29/735 (2013.01); H02H 9/046 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to improved turn-on voltage of high voltage electrostatic discharge device and methods of manufacture. The structure comprises a high voltage NPN with polysilicon material on an isolation structure located at a base region, the polysilicon material extending to at least one of a collector and emitter of a bipolar junction transistor (BJT), and the polysilicon material completely covering the base region of the BJT.