The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Aug. 02, 2021
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Chuan-Chang Wu, Kaohsiung, TW;
Zhen Wu, Kaohsiung, TW;
Hsuan-Hsu Chen, Tainan, TW;
Chun-Lung Chen, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32134 (2013.01); H01L 29/66545 (2013.01);
Abstract
A method for a clean procedure during manufacturing a semiconductor device, includes: providing a patterned sacrificial gate structure including a gate dielectric and a sacrificial layer; wherein the patterned sacrificial gate structure is embedded in a dielectric layer and an upper surface of the sacrificial layer is exposed; performing a first etching process to remove the sacrificial layer; and performing a hydrophilic treatment and a hydrophobic treatment to remove a residue of the sacrificial layer.