The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Jun. 08, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
ChihCheng Liu, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments provide a semiconductor device and a method of manufacturing the same. The method includes: providing a layer to be etched; forming a patterned first mask layer on the layer to be etched; and forming a patterned second mask layer formed on the layer to be etched, where the second mask layer and the first mask layer jointly define an opening, which exposes the layer to be etched; and etching the layer to be etched using the first mask layer and the second mask layer as masks, thus forming a pattern to be etched. The above-described method of manufacturing the semiconductor device allows the feature size of the first mask layer and the second mask layer to be relatively larger while keeping the device feature size the same, makes it possible to further reduce the feature size of the device.