The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Mar. 26, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Yun Heub Song, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/12 (2020.01); G11C 11/16 (2006.01); G11C 29/50 (2006.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G01R 31/1218 (2013.01); G11C 11/161 (2013.01); G11C 29/50 (2013.01); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract
The present invention relates to a film quality inspection method and system for providing a stress evaluation scheme for inspection of film quality of a magnetic tunnel junction (MTJ) cell of spin-transfer torque magnetic random access memory (STT-MRAM), wherein a bipolar signal and a unipolar signal including a unipolar hole (positive polarity) and a unipolar electron (negative polarity) are simultaneously applied to the same MTJ cell, and then according to a result of a comparison of a cycling gap, the quality of a thin film having a thickness of about 1 nm may be inspected.