The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Jul. 27, 2021
Globalwafers Co., Ltd., Hsinchu, TW;
Ching-Shan Lin, Hsinchu, TW;
GlobalWafers Co., Ltd., Hsinchu, TW;
Abstract
A manufacturing method of a silicon carbide wafer includes the following. A raw material containing carbon and silicon and a seed located above the raw material are provided in a reactor. A nitrogen content in the reactor is reduced, which includes the following. An argon gas is passed into the reactor, where a flow rate of passing the argon gas into the reactor is 1,000 sccm to 5,000 sccm, and a time of passing the argon gas into the reactor is 2 hours to 48 hours. The reactor and the raw material are heated to form a silicon carbide material on the seed. The reactor and the raw material are cooled to obtain a silicon carbide ingot. The silicon carbide ingot is cut to obtain a plurality of silicon carbide wafers. A semiconductor structure is also provided.