The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Sep. 25, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Uri Bear, Pardes-Hana, IL;

Elad Peer, Yokneam Ilit, IL;

Elena Sidorov, Haifa, IL;

Rami Sudai, Haifa, IL;

Reuven Elbaum, Haifa, IL;

Steve J. Brown, Phoenix, AZ (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); G11C 16/04 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10B 41/00 (2023.01); H10B 43/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/788 (2013.01); G11C 16/0408 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H10B 41/00 (2023.02); H10B 43/00 (2023.02);
Abstract

In one embodiment, memory cell includes a control gate, a floating gate, a substrate comprising a source region and a drain region, a first isolator between the control gate and floating gate, and a second isolator between the floating gate and the substrate. The memory cell is configured to have a retention time that is within a statistical window around a selected lifespan. The selected lifespan may be less than ten years, such as, for example, less than one year, less than one month, or less than one week.


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