The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
May. 27, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Meng-Han Lin, Hsinchu, TW;
Te-An Chen, Taichung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66143 (2013.01); H01L 21/02063 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/28537 (2013.01); H01L 21/31111 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823475 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01); H01L 27/0629 (2013.01); H01L 29/0649 (2013.01); H01L 29/47 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device includes a first well region in a substrate; a first dielectric layer over the first well region, wherein the first dielectric layer includes a stepped shape over the first well region; and a conductive layer over the first well region. The conductive layer forms a Schottky barrier interface with the first well region.
Lin, Meng-Han. (2024). Schottky barrier diode with reduced leakage current and method of forming the same (U.S. Patent No. 11984490). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11984490
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile