The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Sep. 02, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor structure comprises: providing a substrate, comprising a polysilicon layer, a first conductive layer, a first dielectric layer, a mask layer, and a sacrificial layer sequentially formed thereon, wherein the sacrificial layer has a plurality of first trenches distributed at intervals; forming a first insulating layer on the sacrificial layer; forming a protective layer, the protective layer only covering a surface of the first insulating layer above the top surface of the sacrificial layer; removing the protective layer, part of the first insulating layer, the sacrificial layer, and part of the mask layer to form a first pattern layer; and removing part of the first dielectric layer, part of the first conductive layer, and part of the polysilicon layer by using the first pattern layer as a mask to form a BL structure.