The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2024
Filed:
Nov. 04, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Peng-Soon Lim, Johor, MY;
Chung-Liang Cheng, Changhua County, TW;
Huang-Lin Chao, Hillsboro, OR (US);
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device with liner-free contact structures and a method of fabricating the same are disclosed. The method includes forming first and second source/drain (S/D) regions on first and second fin structures, forming a first dielectric layer between the first and second S/D regions, forming first and second gate-all-around (GAA) structures on the first and second fin structures, forming a second dielectric layer on the first and second GAA structures and the first dielectric layer, forming a tapered trench opening in the second dielectric layer and on the first and second GAA structures and the first dielectric layer, selectively forming a seed layer on top surfaces of the first and second GAA structures and the first dielectric layer that are exposed in the tapered trench opening, and selectively depositing a conductive layer on the seed layer to fill the tapered trench opening.