The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Dec. 15, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Shurong Liang, Lynnfield, MA (US);

Alexander C. Kontos, Beverly, MA (US);

Il-Woong Koo, North Andover, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/04 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0332 (2013.01); H01L 21/0475 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/32137 (2013.01);
Abstract

A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope.


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