The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Jun. 30, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Ying Wang, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/4094 (2006.01); G11C 11/4096 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4096 (2013.01); G11C 11/4094 (2013.01);
Abstract

A local amplifier circuit includes write control transistors, configured to connect, based on write enable signal, global data line to local data line; column selection transistors, configured to connect, based on column selection signal, bit line to local data line; first control PMOS transistor having gate connected to local data line, one of source or drain connected to global data line, and the other one connected to read control transistor; and second control PMOS transistor having gate connected to complementary local data line, one of source or drain connected to complementary global data line, and the other one connected to read control transistor. Read control transistors are configured to pull up or down levels at terminals of first control PMOS transistor and second control PMOS transistor, each of which is source or drain connected to a respective one of read control transistors, to preset level based on read enable signal.


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