The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 14, 2024

Filed:

Dec. 28, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Chun Sum Yeung, San Jose, CA (US);

Deping He, Boise, ID (US);

Min Rui Ma, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 12/0804 (2016.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0804 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G06F 2212/1032 (2013.01); G11C 16/0483 (2013.01);
Abstract

Methods, systems, and devices for techniques for enhanced system performance after retention loss are described. A memory system may program a page of memory cells in response to receiving a power down notification. As part of the programming, the memory system may record an indication of a voltage threshold of the page and power down for a duration of time, during which the memory system may experience retention loss. Upon powering on, the memory device may compare the voltage threshold of the page to the indication stored prior to powering down and determine a voltage offset for one or more blocks of the memory system. In some cases, the memory system may use the voltage offset to determine a starting bin, and may initiate a bin scan to determine a final bin for the one or more blocks.


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