The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Sep. 08, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Injo Ok, Loudonville, NY (US);

Andrew Herbert Simon, Fishkill, NY (US);

Kevin W. Brew, Niskayuna, NY (US);

Muthumanickam Sankarapandian, Niskayuna, NY (US);

Steven Michael McDermott, Wynantskill, NY (US);

Nicole Saulnier, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/823 (2023.02); H10N 70/041 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02);
Abstract

A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.


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