The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Jun. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Chih-Kuang Kao, Hsin-Chu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01);
Abstract

A capacitor structure includes a first electrode, a second electrode, a third electrode, a first dielectric layer and a second dielectric layer. The second electrode is disposed over the first electrode. The third electrode is disposed over the second electrode. The first dielectric layer is disposed between the first electrode and the second electrode. The second dielectric layer is disposed between the second electrode and the third electrode. The third electrode contacts the first electrode. A semiconductor structure thereof and a method for forming the same are also provided.


Find Patent Forward Citations

Kao, Chih-Kuang. (2024). Semiconductor structure and method for manufacturing capacitor structure (U.S. Patent No. 11978764). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11978764

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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